Power Integrations SiC Schottky, Single, 12 A, 2-Pin 600 V TO-220 QH12TZ600Q
- RS Stock No.:
- 231-8074
- Mfr. Part No.:
- QH12TZ600Q
- Manufacturer:
- Power Integrations
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP561.60
(exc. VAT)
PHP629.00
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP112.32 | PHP561.60 |
| 10 - 10 | PHP104.574 | PHP522.87 |
| 15 - 15 | PHP100.702 | PHP503.51 |
| 20 - 20 | PHP96.828 | PHP484.14 |
| 25 + | PHP94.504 | PHP472.52 |
*price indicative
- RS Stock No.:
- 231-8074
- Mfr. Part No.:
- QH12TZ600Q
- Manufacturer:
- Power Integrations
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Power Integrations | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 12A | |
| Product Type | SiC Schottky | |
| Sub Type | SiC Schottky | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 3.1V | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 61mW | |
| Peak Reverse Recovery Time trr | 20.5ns | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Height | 30.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Power Integrations | ||
Diode Configuration Single | ||
Maximum Forward Current If 12A | ||
Product Type SiC Schottky | ||
Sub Type SiC Schottky | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 3.1V | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 600V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 100A | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 61mW | ||
Peak Reverse Recovery Time trr 20.5ns | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Height 30.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Power Integrations Qspeed H-Series SiC Replacement Diode has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduces EMI and eliminates snubbers. It replaces SiC diodes for similar efficiency performance in high switching frequency applications.
Features and Benefits
Low QRR, low IRRM, low tRR
High dIF/dt capable (1000 A / μs)
Soft recovery
AEC-Q101 qualified
Fab, assembly and test certified to IATF 16949
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
Applications
Power Factor Correction boost diode in on-board charger
Output rectifier of on-board charger
Related links
- Power Integrations SiC Schottky 12 A, 2-Pin 600 V TO-220
- IXYS Silicon Junction 30 A, 2-Pin 600 V TO-220
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- IXYS Silicon Junction 30 A, 2-Pin 600 V TO-220 DSEP29-06B
- onsemi Silicon Junction 15 A, 2-Pin 600 V TO-220
- IXYS Silicon Junction 15 A, 2-Pin 600 V TO-220
- Vishay Switching Diode 30 A, 3-Pin 600 V TO-220
- IXYS Silicon Junction 15 A, 2-Pin 600 V TO-220 DSEP15-06A