Vishay Silicon Diode, Small Signal Diode, 300 mA, 2-Pin 50 V DO-35 1N4150TR

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Subtotal (1 pack of 200 units)*

PHP613.80

(exc. VAT)

PHP687.40

(inc. VAT)

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Units
Per Unit
Per Pack*
200 - 200PHP3.069PHP613.80
400 - 800PHP2.977PHP595.40
1000 - 1800PHP2.798PHP559.60
2000 - 4800PHP2.547PHP509.40
5000 +PHP2.241PHP448.20

*price indicative

Packaging Options:
RS Stock No.:
180-8609
Mfr. Part No.:
1N4150TR
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Silicon Diode

Maximum Forward Current If

300mA

Diode Configuration

Small Signal Diode

Mount Type

Through Hole

Sub Type

Silicon Diode

Package Type

DO-35

Pin Count

2

Minimum Operating Temperature

-55°C

Peak Non-Repetitive Forward Surge Current Ifsm

4A

Maximum Power Dissipation Pd

500mW

Peak Reverse Recovery Time trr

4ns

Maximum Peak Reverse Repetitive Voltage Vrrm

50V

Maximum Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

3.9mm

Height

1.7mm

Width

1.7 mm

Automotive Standard

No

Vishay Switching Diode


The Vishay switching diode has an electrical rating of 50V reverse voltage and 100nA reverse current. A switching diode is a two-terminal PN junction device that can be used to switch signals or act as a rectifier at low voltages. It has a forward current of 200mA and forward voltage of 1V.

Features and Benefits


• High forward current capability

• It is a silicon epitaxial small signal fast switching device

• Low forward voltage drop

• Marking type is 1N4150

• Operating temperature ranges between -65°C and 175°C

• Power dissipation is 500mW

• Recovery time is 4ns

• Through hole mounting type

Applications


• Fast switching devices

• General purpose use in computers

• Industrial applications

• Microcontrollers

Certifications


• AEC-Q101

• E3 level certified

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