Infineon Silicon Junction, Single, 80 A, 3-Pin 650 V TO-247 IDW40E65D2FKSA1

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Subtotal (1 tube of 30 units)*

PHP2,946.24

(exc. VAT)

PHP3,299.79

(inc. VAT)

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30 +PHP98.208PHP2,946.24

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RS Stock No.:
145-8929
Mfr. Part No.:
IDW40E65D2FKSA1
Manufacturer:
Infineon
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Brand

Infineon

Diode Configuration

Single

Product Type

Silicon Junction

Maximum Forward Current If

80A

Mount Type

Through Hole

Sub Type

Silicon Junction

Package Type

TO-247

Pin Count

3

Peak Non-Repetitive Forward Surge Current Ifsm

250A

Maximum Power Dissipation Pd

180W

Peak Reverse Recovery Time trr

83ns

Maximum Peak Reverse Repetitive Voltage Vrrm

650V

Minimum Operating Temperature

-40°C

Maximum Forward Voltage Vf

2.3V

Maximum Operating Temperature

175°C

Length

16.13mm

Height

21.1mm

Width

5.21 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MY

Fast Switching Emitter Controlled Diodes, Infineon


The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.

Rapid 1 diode switches between 18kHz and 40kHz

1.35V temperature-stable forward voltage

Ideal for Power Factor Correction (PFC) topologies

The Rapid 2 diode switches between 40 kHz and 100 kHz

Low reverse recovery charge: forward voltage ratio for BiC performance

Low reverse recovery time

Low turn-on losses on the boost switch

Ultra-fast Diode 600 V/1200 V Emitter Controlled technology

Qualified according to JEDEC Standard

Good EMI behaviour

Low conduction losses

Easy paralleling

Diodes and Rectifiers, Infineon


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