Infineon Silicon Junction, Single, 30 A, 2-Pin 1200 V TO-220

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Subtotal (1 tube of 50 units)*

PHP5,128.20

(exc. VAT)

PHP5,743.60

(inc. VAT)

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Units
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Per Tube*
50 +PHP102.564PHP5,128.20

*price indicative

RS Stock No.:
145-8584
Mfr. Part No.:
IDP30E120XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Diode Configuration

Single

Product Type

Silicon Junction

Maximum Forward Current If

30A

Mount Type

Through Hole

Sub Type

Silicon Junction

Package Type

TO-220

Pin Count

2

Minimum Operating Temperature

-55°C

Peak Non-Repetitive Forward Surge Current Ifsm

102A

Maximum Peak Reverse Repetitive Voltage Vrrm

1200V

Maximum Forward Voltage Vf

2.15V

Maximum Power Dissipation Pd

138W

Peak Reverse Recovery Time trr

380ns

Maximum Operating Temperature

150°C

Height

15.95mm

Width

4.5 mm

Length

10.2mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MY

Fast Switching Emitter Controlled Diodes, Infineon


The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.

Rapid 1 diode switches between 18kHz and 40kHz

1.35V temperature-stable forward voltage

Ideal for Power Factor Correction (PFC) topologies

The Rapid 2 diode switches between 40 kHz and 100 kHz

Low reverse recovery charge: forward voltage ratio for BiC performance

Low reverse recovery time

Low turn-on losses on the boost switch

Ultra-fast Diode 600 V/1200 V Emitter Controlled technology

Qualified according to JEDEC Standard

Good EMI behaviour

Low conduction losses

Easy paralleling

Diodes and Rectifiers, Infineon


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