Intelligent Memory IM8G16D3FFBG-107I SDRAM 8 GB Surface, 96-Pin 16 bit FBGA-96 Ball
- RS Stock No.:
- 588-640
- Mfr. Part No.:
- IM8G16D3FFBG-107I
- Manufacturer:
- Intelligent Memory
Subtotal (1 unit)*
PHP4,940.52
(exc. VAT)
PHP5,533.38
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per Unit |
|---|---|
| 1 + | PHP4,940.52 |
*price indicative
- RS Stock No.:
- 588-640
- Mfr. Part No.:
- IM8G16D3FFBG-107I
- Manufacturer:
- Intelligent Memory
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Intelligent Memory | |
| Memory Size | 8GB | |
| Product Type | SDRAM | |
| Data Bus Width | 16bit | |
| Address Bus Width | 16bit | |
| Maximum Clock Frequency | 933MHz | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 0.9ns | |
| Number of Words | 64 | |
| Mount Type | Surface | |
| Package Type | FBGA-96 Ball | |
| Pin Count | 96 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 95°C | |
| Height | 1.2mm | |
| Length | 13.5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q100 | |
| Maximum Supply Voltage | 1.45V | |
| Minimum Supply Voltage | 1.283V | |
| Select all | ||
|---|---|---|
Brand Intelligent Memory | ||
Memory Size 8GB | ||
Product Type SDRAM | ||
Data Bus Width 16bit | ||
Address Bus Width 16bit | ||
Maximum Clock Frequency 933MHz | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 0.9ns | ||
Number of Words 64 | ||
Mount Type Surface | ||
Package Type FBGA-96 Ball | ||
Pin Count 96 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 95°C | ||
Height 1.2mm | ||
Length 13.5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q100 | ||
Maximum Supply Voltage 1.45V | ||
Minimum Supply Voltage 1.283V | ||
- COO (Country of Origin):
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling