Vishay 45 V 400 A Diode Recovery 3-Pin TO-240AA

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PHP3,196.90

(exc. VAT)

PHP3,580.53

(inc. VAT)

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1 - 9PHP3,196.90
10 - 49PHP3,101.02
50 - 99PHP3,007.97
100 - 249PHP2,917.73
250 +PHP2,830.20

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RS Stock No.:
873-2354
Mfr. Part No.:
VS-VSKCS400/045
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Diode

Mount Type

Panel

Package Type

TO-240AA

Maximum Continuous Forward Current If

400A

Peak Reverse Repetitive Voltage Vrrm

45V

Diode Configuration

Two Diodes Common Cathodes

Series

ADD-A-PAK Generation VII

Rectifier Type

Recovery

Pin Count

3

Maximum Forward Voltage Vf

1.14V

Peak Non-Repetitive Forward Surge Current Ifsm

29000A

Peak Reverse Current Ir

1.2A

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

22.6 mm

Height

35mm

Standards/Approvals

UL Approved File E78996

Length

92mm

Automotive Standard

No

COO (Country of Origin):
IT

IGBT Modules, Vishay


Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

Wide range of industry-standard package styles

Direct mount on heat sink

Choice of PT, NPT, and Trench IGBT technologies

Low-VCE(on) IGBT

Switching frequency from 1 kHz to 150 kHz

Rugged transient performance

High isolation voltage up to 3500 V

100 % lead (Pb)-free and RoHS-compliant

Low thermal resistance

Wide operating temperature range (-40 °C to +175 °C)

IGBT Modules, Vishay


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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