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Vishay 50 V 4 A Diode Schottky 2-Pin DO-221BC V4PAN50-M3/I

RS Stock No.:: 830-6218P
Mfr. Part No.:: V4PAN50-M3/I
Manufacturer:: Vishay

Vishay 50 V 4 A Diode Schottky 2-Pin DO-221BC V4PAN50-M3/I

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Subtotal 80 units (supplied on a continuous strip)*

PHP2,064.16

(exc. VAT)

PHP2,311.84

(inc. VAT)

FREE delivery for orders over ₱5,000.00

In Stock

Plus 3,360 unit(s) shipping from September 14, 2026

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Units	Per Unit
80 - 160	PHP25.802
200 - 360	PHP25.028
400 - 760	PHP24.277
800 +	PHP23.549

*price indicative

RS Stock No.:: 830-6218P
Mfr. Part No.:: V4PAN50-M3/I
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Diode
	Mount Type	Surface
	Package Type	DO-221BC
	Maximum Continuous Forward Current If	4A
	Peak Reverse Repetitive Voltage Vrrm	50V
	Diode Configuration	Single
	Series	V4
	Rectifier Type	Schottky
	Pin Count	2
	Peak Non-Repetitive Forward Surge Current Ifsm	80A
	Minimum Operating Temperature	-40°C
	Peak Reverse Current Ir	35mA
	Maximum Forward Voltage Vf	590mV
	Maximum Operating Temperature	150°C
	Length	4.35mm
	Standards/Approvals	No
	Width	2.7mm
	Height	1mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Diode
	Mount Type Surface
	Package Type DO-221BC
	Maximum Continuous Forward Current If 4A
	Peak Reverse Repetitive Voltage Vrrm 50V
	Diode Configuration Single
	Series V4
	Rectifier Type Schottky
	Pin Count 2
	Peak Non-Repetitive Forward Surge Current Ifsm 80A
	Minimum Operating Temperature -40°C
	Peak Reverse Current Ir 35mA
	Maximum Forward Voltage Vf 590mV
	Maximum Operating Temperature 150°C
	Length 4.35mm
	Standards/Approvals No
	Width 2.7mm
	Height 1mm
	Automotive Standard No

COO (Country of Origin):: CN

TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor

The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over Planar Schottky rectifiers. At operating voltages of 45V and above Planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.

Features

Patented Trench Structure

Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters

High power density and low forward voltage

Schottky Rectifiers, Vishay Semiconductor

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