Vishay 100 V 10 A Diode Schottky 3-Pin D2PAK MBRB10100-E3/8W

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Subtotal (1 pack of 5 units)*

PHP356.00

(exc. VAT)

PHP398.70

(inc. VAT)

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Last RS stock
  • Final 2,200 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
5 - 20PHP71.20PHP356.00
25 - 95PHP68.75PHP343.75
100 - 245PHP68.016PHP340.08
250 - 495PHP67.284PHP336.42
500 +PHP66.666PHP333.33

*price indicative

Packaging Options:
RS Stock No.:
813-0828
Mfr. Part No.:
MBRB10100-E3/8W
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Diode

Mount Type

Surface

Package Type

TO-263

Maximum Continuous Forward Current If

10A

Peak Reverse Repetitive Voltage Vrrm

100V

Diode Configuration

Single

Series

MBR

Rectifier Type

Schottky

Pin Count

3

Maximum Forward Voltage Vf

800mV

Minimum Operating Temperature

-65°C

Peak Reverse Current Ir

6mA

Peak Non-Repetitive Forward Surge Current Ifsm

150A

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS 2002/95/EC, J-STD-020, J-STD-002, JESD 22-B106, JESD 22-B102, JESD 201 Class 1A, WEEE 2002/96/EC, UL 94 V-0

Diameter

3.74 mm

Length

10.45mm

Height

4.83mm

Width

9.14 mm

Automotive Standard

No

COO (Country of Origin):
CN

TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor


The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over Planar Schottky rectifiers. At operating voltages of 45V and above Planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.

Features


Patented Trench Structure

Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters

High power density and low forward voltage

Schottky Rectifiers, Vishay Semiconductor


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