Infineon 650 V 20 A Rectifier & Schottky Diode 3-Pin PG-TO-247
- RS Stock No.:
- 258-0979
- Mfr. Part No.:
- IDW40G65C5BXKSA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
PHP23,045.79
(exc. VAT)
PHP25,811.28
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 28, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 30 | PHP768.193 | PHP23,045.79 |
| 60 - 60 | PHP745.147 | PHP22,354.41 |
| 90 + | PHP715.342 | PHP21,460.26 |
*price indicative
- RS Stock No.:
- 258-0979
- Mfr. Part No.:
- IDW40G65C5BXKSA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | PG-TO-247 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDW40G65C5B | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 210μA | |
| Maximum Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1) for target applications | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Through Hole | ||
Package Type PG-TO-247 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDW40G65C5B | ||
Pin Count 3 | ||
Peak Reverse Current Ir 210μA | ||
Maximum Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1) for target applications | ||
Automotive Standard No | ||
The Infineon ThinQ generation 5 represents leading edge technology for the SiC Schottky barrier diodes. Thanks to the more compact design and thin wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ Generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
High surge current capability
Higher system reliability due to lower operating temperatures
Reduced EMI
Related links
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