Infineon 650 V 4 A Diode 2-Pin D2PAK
- RS Stock No.:
- 258-0957
- Mfr. Part No.:
- IDK04G65C5XTMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1000 units)*
PHP49,978.00
(exc. VAT)
PHP55,975.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from June 01, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | PHP49.978 | PHP49,978.00 |
| 2000 - 2000 | PHP48.478 | PHP48,478.00 |
| 3000 + | PHP46.539 | PHP46,539.00 |
*price indicative
- RS Stock No.:
- 258-0957
- Mfr. Part No.:
- IDK04G65C5XTMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDK04G65C5 | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.2V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 215A | |
| Peak Reverse Current Ir | 500μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDK04G65C5 | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.2V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 215A | ||
Peak Reverse Current Ir 500μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1, RoHS | ||
Automotive Standard No | ||
The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
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