Infineon 650 V 6 A Rectifier & Schottky Diode 5-Pin PG-VSON-4 IDL06G65C5XUMA2
- RS Stock No.:
- 249-6933
- Mfr. Part No.:
- IDL06G65C5XUMA2
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
PHP125.44
(exc. VAT)
PHP140.49
(inc. VAT)
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In Stock
- 3,000 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP125.44 |
| 10 - 99 | PHP113.12 |
| 100 - 249 | PHP101.72 |
| 250 - 499 | PHP91.22 |
| 500 + | PHP82.10 |
*price indicative
- RS Stock No.:
- 249-6933
- Mfr. Part No.:
- IDL06G65C5XUMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Surface | |
| Package Type | PG-VSON-4 | |
| Maximum Continuous Forward Current If | 6A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | XDL06G65 | |
| Pin Count | 5 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 36A | |
| Maximum Forward Voltage Vf | 1.7V | |
| Peak Reverse Current Ir | 0.11mA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Surface | ||
Package Type PG-VSON-4 | ||
Maximum Continuous Forward Current If 6A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series XDL06G65 | ||
Pin Count 5 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 36A | ||
Maximum Forward Voltage Vf 1.7V | ||
Peak Reverse Current Ir 0.11mA | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC1 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new. It has more compact design and thin-wafer technology.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
High surge current capability
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC1 for target applications
Breakdown voltage tested at 4.5 mA2
Optimized for high temperature operation
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