Infineon 1200 V 30 A SiC Diode Schottky 2-Pin TO-247

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Bulk discount available

Subtotal (1 tube of 30 units)*

PHP13,770.96

(exc. VAT)

PHP15,423.48

(inc. VAT)

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  • 60 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
30 - 60PHP459.032PHP13,770.96
90 - 120PHP445.261PHP13,357.83
150 +PHP431.903PHP12,957.09

*price indicative

RS Stock No.:
222-4843
Mfr. Part No.:
IDWD30G120C5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

SiC Diode

Mount Type

Surface

Package Type

TO-247

Maximum Continuous Forward Current If

30A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Single

Series

5th Generation CoolSiC 1200V Schottky Diode

Rectifier Type

Schottky

Pin Count

2

Peak Reverse Current Ir

248μA

Peak Non-Repetitive Forward Surge Current Ifsm

240A

Minimum Operating Temperature

-55°C

Maximum Forward Voltage Vf

1.65V

Maximum Operating Temperature

175°C

Width

15.8 mm

Length

40.21mm

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 30 A is also available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

No reverse recovery current, no forward recovery voltage

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

Tight forward voltage distribution

High surge current capability

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