Infineon 1200 V 20 A SiC Diode Schottky 2-Pin TO-247 IDWD20G120C5XKSA1
- RS Stock No.:
- 222-4842
- Mfr. Part No.:
- IDWD20G120C5XKSA1
- Manufacturer:
- Infineon
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PHP466.90
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP466.90 |
| 10 - 99 | PHP427.48 |
| 100 - 249 | PHP395.13 |
| 250 - 499 | PHP366.73 |
| 500 + | PHP356.46 |
*price indicative
- RS Stock No.:
- 222-4842
- Mfr. Part No.:
- IDWD20G120C5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Surface | |
| Product Type | SiC Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | 5th Generation CoolSiCTM 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 166μA | |
| Maximum Forward Voltage Vf | 1.65V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 190A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 40.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Surface | ||
Product Type SiC Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series 5th Generation CoolSiCTM 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 166μA | ||
Maximum Forward Voltage Vf 1.65V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 190A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 40.21mm | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 20 A in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.
No reverse recovery current, no forward recovery voltage
Temperature-independent switching behaviour
Low forward voltage even at high operating temperature
Tight forward voltage distribution
High surge current capability
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