Infineon 1200 V 10 A Diode Schottky 2-Pin TO-247 IDWD10G120C5XKSA1

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PHP582.91

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PHP652.86

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP291.455PHP582.91
10 - 98PHP267.43PHP534.86
100 - 248PHP246.515PHP493.03
250 - 498PHP229.17PHP458.34
500 +PHP222.94PHP445.88

*price indicative

Packaging Options:
RS Stock No.:
222-4838
Mfr. Part No.:
IDWD10G120C5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Mount Type

Surface

Product Type

Diode

Package Type

TO-247

Maximum Continuous Forward Current If

10A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Silicon Carbide Diode

Series

5th Generation CoolSiCTM 1200V

Rectifier Type

Schottky

Pin Count

2

Peak Reverse Current Ir

80μA

Maximum Forward Voltage Vf

1.7V

Minimum Operating Temperature

-55°C

Peak Non-Repetitive Forward Surge Current Ifsm

140A

Maximum Operating Temperature

175°C

Width

15.8 mm

Length

40.21mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 10 A is now available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes commonly used today. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

No reverse recovery current, no forward recovery voltage

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

Tight forward voltage distribution

High surge current capability

Real two-pin package with 8.7 mm creepage and clearance distances

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