Infineon 1200 V 20 A Diode Schottky 3-Pin TO-247 IDW20G120C5BFKSA1
- RS Stock No.:
- 222-4836
- Mfr. Part No.:
- IDW20G120C5BFKSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
PHP380.38
(exc. VAT)
PHP426.03
(inc. VAT)
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP380.38 |
| 10 - 99 | PHP348.89 |
| 100 - 249 | PHP321.64 |
| 250 - 499 | PHP299.22 |
| 500 + | PHP290.74 |
*price indicative
- RS Stock No.:
- 222-4836
- Mfr. Part No.:
- IDW20G120C5BFKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | 5th Generation CoolSiCTM | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 190A | |
| Maximum Forward Voltage Vf | 2.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.13mm | |
| Width | 5.21 mm | |
| Height | 21.1mm | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series 5th Generation CoolSiCTM | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 190A | ||
Maximum Forward Voltage Vf 2.3V | ||
Maximum Operating Temperature 175°C | ||
Length 16.13mm | ||
Width 5.21 mm | ||
Height 21.1mm | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 20 A in a TO-247-3 package presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is combined with a merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance
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