Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK IDM02G120C5XTMA1
- RS Stock No.:
- 222-4827
- Mfr. Part No.:
- IDM02G120C5XTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP544.50
(exc. VAT)
PHP609.85
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,310 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP108.90 | PHP544.50 |
| 10 - 95 | PHP99.896 | PHP499.48 |
| 100 - 245 | PHP92.146 | PHP460.73 |
| 250 - 495 | PHP85.654 | PHP428.27 |
| 500 + | PHP83.14 | PHP415.70 |
*price indicative
- RS Stock No.:
- 222-4827
- Mfr. Part No.:
- IDM02G120C5XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 2A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Series | 5th Generation thinQ!TM | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.3V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 37A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Length | 6.65mm | |
| Height | 10.4mm | |
| Width | 2.35 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 2A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Series 5th Generation thinQ!TM | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.3V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 37A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Length 6.65mm | ||
Height 10.4mm | ||
Width 2.35 mm | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Related links
- Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK
- Infineon 1200 V 40 A Diode SiC Schottky 2-Pin TO-247
- Infineon 1200 V 40 A Diode SiC Schottky 2-Pin TO-247 IDW40G120C5BFKSA1
- Infineon 1200 V 18 A Switching Diode Schottky 2-Pin DPAK
- Infineon 1200 V 5 A Diode Schottky 2-Pin DPAK
- Infineon 1200 V 18 A Switching Diode Schottky 2-Pin DPAK IDM10G120C5XTMA1
- Infineon 1200 V 5 A Diode Schottky 2-Pin DPAK IDM05G120C5XTMA1
- Infineon 1200 V 30 A SiC Diode Schottky 2-Pin TO-247