Infineon 650 V 6 A SiC Silicon Carbide Diode Schottky 2-Pin TO-220 IDH06G65C5XKSA2
- RS Stock No.:
- 218-6300
- Mfr. Part No.:
- IDH06G65C5XKSA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP527.97
(exc. VAT)
PHP591.325
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 265 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP105.594 | PHP527.97 |
| 10 - 95 | PHP96.844 | PHP484.22 |
| 100 - 245 | PHP89.428 | PHP447.14 |
| 250 - 495 | PHP83.05 | PHP415.25 |
| 500 + | PHP80.676 | PHP403.38 |
*price indicative
- RS Stock No.:
- 218-6300
- Mfr. Part No.:
- IDH06G65C5XKSA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | SiC Silicon Carbide Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 6A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | 5th Generation thinQ!TM | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 54A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.7V | |
| Peak Reverse Current Ir | 750μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 29.95mm | |
| Length | 10.2mm | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Width | 4.5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type SiC Silicon Carbide Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 6A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series 5th Generation thinQ!TM | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 54A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.7V | ||
Peak Reverse Current Ir 750μA | ||
Maximum Operating Temperature 175°C | ||
Height 29.95mm | ||
Length 10.2mm | ||
Standards/Approvals J-STD20 and JESD22 | ||
Width 4.5 mm | ||
Automotive Standard No | ||
The Infineon SiC Schottky diode made up of revolutionary semiconductor material. It is mainly used in switch mode power supply, power factor correction and solar inverter.
High surge current capability
Pb free
RoHS compliant
Related links
- Infineon 650 V 6 A SiC Silicon Carbide Diode Schottky 2-Pin TO-220
- Infineon 650 V 2 A Semiconductor Silicon Carbide Diode 5-Pin PG-VSON-4
- Infineon 650 V 2 A Semiconductor Silicon Carbide Diode 5-Pin PG-VSON-4 IDL02G65C5XUMA2
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220 IDH12G65C5XKSA2
- Infineon 650 V 6 A Diode Schottky 2-Pin TO-220
- Infineon 650 V 6 A Diode Schottky 2-Pin TO-220 IDH06G65C6XKSA1
- Infineon 650 V 10 A SiC Schottky Diode Schottky 5-Pin ThinPAK 8x8