STMicroelectronics 25 V 2 A Diode Schottky 2-Pin SMA STPS2L25AFN
- RS Stock No.:
- 203-3469P
- Mfr. Part No.:
- STPS2L25AFN
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 203-3469P
- Mfr. Part No.:
- STPS2L25AFN
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | SMA | |
| Maximum Continuous Forward Current If | 2A | |
| Peak Reverse Repetitive Voltage Vrrm | 25V | |
| Diode Configuration | Single | |
| Series | STPS2L25 | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 30mA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 90A | |
| Minimum Operating Temperature | -65°C | |
| Maximum Forward Voltage Vf | 0.33V | |
| Maximum Operating Temperature | 175°C | |
| Length | 4.6mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type SMA | ||
Maximum Continuous Forward Current If 2A | ||
Peak Reverse Repetitive Voltage Vrrm 25V | ||
Diode Configuration Single | ||
Series STPS2L25 | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 30mA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 90A | ||
Minimum Operating Temperature -65°C | ||
Maximum Forward Voltage Vf 0.33V | ||
Maximum Operating Temperature 175°C | ||
Length 4.6mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics single Schottky rectifier suited to switched mode power supplies and high frequency DC to DC converters. It is packaged in SMB, SMB flat for thermal resistance characteristic improvement, this device is especially intended for use in parallel with MOSFETs in synchronous rectification.
Very low forward voltage drop for less power dissipation
Avalanche capability specified
Optimized conduction and reverse losses trade-off which means the highest efficiency in the applications
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