STMicroelectronics 1200 V 5 A Diode Schottky 2-Pin TO-220AC STPSC5H12D
- RS Stock No.:
- 201-0873
- Mfr. Part No.:
- STPSC5H12D
- Manufacturer:
- STMicroelectronics
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 201-0873
- Mfr. Part No.:
- STPSC5H12D
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-220AC | |
| Maximum Continuous Forward Current If | 5A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | STPSC | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 210A | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 15μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Diameter | 3.75mm | |
| Length | 28.25mm | |
| Height | 4.4mm | |
| Width | 10mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-220AC | ||
Maximum Continuous Forward Current If 5A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series STPSC | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 210A | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 15μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Diameter 3.75mm | ||
Length 28.25mm | ||
Height 4.4mm | ||
Width 10mm | ||
Automotive Standard No | ||
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultra high-performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
Low VF
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