onsemi 650 V 10.1 A Schottky Diode Schottky 2-Pin TO-220

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Subtotal (1 tube of 50 units)*

PHP5,505.75

(exc. VAT)

PHP6,166.45

(inc. VAT)

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Units
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Per Tube*
50 +PHP110.115PHP5,505.75

*price indicative

RS Stock No.:
195-8721
Mfr. Part No.:
FFSP0865B
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Schottky Diode

Mount Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current If

10.1A

Peak Reverse Repetitive Voltage Vrrm

650V

Series

EliteSiC

Diode Configuration

Single

Rectifier Type

Schottky

Pin Count

2

Peak Reverse Current Ir

160μA

Peak Non-Repetitive Forward Surge Current Ifsm

56A

Maximum Forward Voltage Vf

2.4V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.67mm

Height

16.51mm

Width

4.8 mm

Standards/Approvals

RoHS, Pb-Free

Automotive Standard

No

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, TO-220-2L


Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175°C

High Surge Current Capacity

Positive Temperature Coefficient

Ease of Paralleling

No Reverse Recovery / No Forward Recovery

These Devices are Pb−Free, Halogen Free/BFR Free

Applications

General Purpose

SMPS, Solar Inverter, UPS

Power Switching Circuits

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