onsemi 650 V 30 A Diode Schottky 2-Pin TO-220 FFSP3065B
- RS Stock No.:
- 194-5757
- Mfr. Part No.:
- FFSP3065B
- Manufacturer:
- onsemi
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Subtotal (1 unit)*
PHP392.54
(exc. VAT)
PHP439.64
(inc. VAT)
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Units | Per Unit |
|---|---|
| 1 + | PHP392.54 |
*price indicative
- RS Stock No.:
- 194-5757
- Mfr. Part No.:
- FFSP3065B
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1.1kA | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 2.92 mm | |
| Height | 16.51mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1.1kA | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 160μA | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 2.92 mm | ||
Height 16.51mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide Schottky Diode 650V 30A TO220 Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D2, TO-220-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
Pb-Free, Halogen Free/BFR Free
175 C
144 mJ
Applications
General Purpose
SMPS
Solar Inverter
UPS
Power Switching Circuit
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