onsemi 650 V 18 A Diode Schottky 3-Pin DPAK FFSD1065A
- RS Stock No.:
- 178-4415
- Mfr. Part No.:
- FFSD1065A
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP983.33
(exc. VAT)
PHP1,101.33
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 4,990 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 95 | PHP196.666 | PHP983.33 |
| 100 - 245 | PHP190.766 | PHP953.83 |
| 250 - 495 | PHP179.32 | PHP896.60 |
| 500 - 995 | PHP163.182 | PHP815.91 |
| 1000 + | PHP143.60 | PHP718.00 |
*price indicative
- RS Stock No.:
- 178-4415
- Mfr. Part No.:
- FFSD1065A
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 18A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 760A | |
| Maximum Forward Voltage Vf | 1.75V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 600μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 18A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 760A | ||
Maximum Forward Voltage Vf 1.75V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 600μA | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, DPAK
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
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