STMicroelectronics 1200 V 10 A Diode Schottky 2-Pin DO-247 STPSC10H12WL
- RS Stock No.:
- 164-7021
- Mfr. Part No.:
- STPSC10H12WL
- Manufacturer:
- STMicroelectronics
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PHP447.73
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP399.76 |
| 10 + | PHP355.82 |
*price indicative
- RS Stock No.:
- 164-7021
- Mfr. Part No.:
- STPSC10H12WL
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | DO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 420A | |
| Peak Reverse Current Ir | 400μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Maximum Operating Temperature | 175°C | |
| Diameter | 3.56 mm | |
| Height | 21.46mm | |
| Width | 5.31 mm | |
| Standards/Approvals | No | |
| Length | 16.26mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type DO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 420A | ||
Peak Reverse Current Ir 400μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Maximum Operating Temperature 175°C | ||
Diameter 3.56 mm | ||
Height 21.46mm | ||
Width 5.31 mm | ||
Standards/Approvals No | ||
Length 16.26mm | ||
Automotive Standard No | ||
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating from -40 °C to 175 °C
Low VF
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