STMicroelectronics 1200 V 20 A Diode Schottky 8-Pin HU3PAK
- RS Stock No.:
- 365-184
- Mfr. Part No.:
- STPSC20G12L2Y
- Manufacturer:
- STMicroelectronics
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Subtotal (1 unit)*
PHP1,525.59
(exc. VAT)
PHP1,708.66
(inc. VAT)
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- Shipping from August 10, 2026
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP1,525.59 |
| 10 - 99 | PHP1,372.86 |
| 100 + | PHP1,266.38 |
*price indicative
- RS Stock No.:
- 365-184
- Mfr. Part No.:
- STPSC20G12L2Y
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | HU3PAK | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | STPS | |
| Rectifier Type | Schottky | |
| Pin Count | 8 | |
| Peak Reverse Current Ir | 500μA | |
| Maximum Forward Voltage Vf | 2.1V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1100A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type HU3PAK | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series STPS | ||
Rectifier Type Schottky | ||
Pin Count 8 | ||
Peak Reverse Current Ir 500μA | ||
Maximum Forward Voltage Vf 2.1V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1100A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The STMicroelectronics SiC diode is a ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turnoff behavior is independent of temperature. Based on the latest technology optimization, this diode has an improved forward surge current capability, making it Ideal for use in PFC, where this ST SiC diode will boost the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.
AEC-Q101 qualified and PPAP capable
None or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
ECOPACK2 compliant component
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