ROHM 650 V 4 A Diode SiC Schottky 2-Pin TO-220FM-2LGE SCS304AMC7G
- RS Stock No.:
- 264-974
- Mfr. Part No.:
- SCS304AMC7G
- Manufacturer:
- ROHM
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP906.80
(exc. VAT)
PHP1,015.60
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 100 unit(s) shipping from January 22, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP181.36 | PHP906.80 |
| 50 - 95 | PHP172.284 | PHP861.42 |
| 100 + | PHP159.542 | PHP797.71 |
*price indicative
- RS Stock No.:
- 264-974
- Mfr. Part No.:
- SCS304AMC7G
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-220FM-2LGE | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | SCS304 | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.71V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A | |
| Peak Reverse Current Ir | 2.4μA | |
| Peak Reverse Recovery Time trr | 18ns | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-220FM-2LGE | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series SCS304 | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.71V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 100A | ||
Peak Reverse Current Ir 2.4μA | ||
Peak Reverse Recovery Time trr 18ns | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM Schottky Barrier Diode is engineered for high-performance applications, delivering exceptional efficiency in power conversion. With its cutting-edge silicon carbide (SiC) technology, this diode significantly reduces switching losses and enhances overall device reliability. Its robust design facilitates high-speed switching and offers a remarkable temperature stability, making it suitable for a wide range of demanding environments.
Capable of handling reverse voltage of up to 650 V ensuring safe operation
Robust packaging provides enhanced thermal management for durability
Ideal for applications in power factor correction and rectification systems
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