onsemi 1 Darlington Transistor PNP, -20 A 120 V HFE:200, 3-Pin TO-204

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PHP822.09

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PHP920.74

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Per Unit
Per Pack*
2 - 8PHP411.045PHP822.09
10 - 38PHP400.77PHP801.54
40 - 98PHP390.75PHP781.50
100 - 498PHP380.98PHP761.96
500 +PHP371.465PHP742.93

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RS Stock No.:
688-1502
Mfr. Part No.:
MJ11015G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Darlington Transistor

Maximum Continuous Collector Current Ic

-20A

Maximum Collector Emitter Voltage Vceo

120V

Package Type

TO-204

Mount Type

Through Hole

Pin Count

3

Number of Elements per Chip

1

Minimum DC Current Gain hFE

200

Minimum Operating Temperature

-55°C

Maximum Collector Base Voltage VCBO

120V

Maximum Emitter Base Voltage VEBO

5V

Transistor Polarity

PNP

Maximum Collector Emitter Saturation Voltage VceSAT

3V

Maximum Power Dissipation Pd

200W

Maximum Operating Temperature

200°C

Length

39.37mm

Standards/Approvals

No

Height

8.51mm

Width

26.67 mm

Series

MJ11012

Automotive Standard

No

The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.

The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain

• Monolithic Construction

• Built-in Base Emitter Shunt Resistor

• Junction Temperature: to +200°C

• PNP Polarity

Versions Available:

688-1502 - pack of 2

103-5055 - tray of 100

PNP Darlington Transistors, ON Semiconductor


Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

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