onsemi MJ11015G 1 Darlington Transistor PNP, -20 A 120 V HFE:200, 3-Pin TO-204
- RS Stock No.:
- 103-5055
- Mfr. Part No.:
- MJ11015G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 100 units)*
PHP32,112.00
(exc. VAT)
PHP35,965.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 100 unit(s) shipping from April 08, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tray* |
|---|---|---|
| 100 - 100 | PHP321.12 | PHP32,112.00 |
| 200 - 300 | PHP311.486 | PHP31,148.60 |
| 400 - 900 | PHP302.142 | PHP30,214.20 |
| 1000 + | PHP293.077 | PHP29,307.70 |
*price indicative
- RS Stock No.:
- 103-5055
- Mfr. Part No.:
- MJ11015G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Darlington Transistor | |
| Maximum Continuous Collector Current Ic | -20A | |
| Maximum Collector Emitter Voltage Vceo | 120V | |
| Package Type | TO-204 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Minimum DC Current Gain hFE | 200 | |
| Transistor Polarity | PNP | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3V | |
| Maximum Collector Base Voltage VCBO | 120V | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Operating Temperature | 200°C | |
| Series | MJ11012 | |
| Width | 26.67 mm | |
| Height | 8.51mm | |
| Length | 39.37mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Darlington Transistor | ||
Maximum Continuous Collector Current Ic -20A | ||
Maximum Collector Emitter Voltage Vceo 120V | ||
Package Type TO-204 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Minimum DC Current Gain hFE 200 | ||
Transistor Polarity PNP | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3V | ||
Maximum Collector Base Voltage VCBO 120V | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Operating Temperature 200°C | ||
Series MJ11012 | ||
Width 26.67 mm | ||
Height 8.51mm | ||
Length 39.37mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CZ
The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.
• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• PNP Polarity
Versions Available:
688-1502 - pack of 2
103-5055 - tray of 100
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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