onsemi 1 Darlington Transistor NPN, 30 A 120 V HFE:200, 3-Pin TO-204

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Subtotal (1 tray of 100 units)*

PHP20,747.30

(exc. VAT)

PHP23,237.00

(inc. VAT)

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Units
Per Unit
Per Tray*
100 - 100PHP207.473PHP20,747.30
200 - 300PHP201.248PHP20,124.80
400 - 900PHP195.211PHP19,521.10
1000 +PHP189.355PHP18,935.50

*price indicative

RS Stock No.:
100-7565
Mfr. Part No.:
MJ11016G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Darlington Transistor

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

120V

Package Type

TO-204

Mount Type

Through Hole

Pin Count

3

Number of Elements per Chip

1

Minimum DC Current Gain hFE

200

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

4V

Maximum Collector Base Voltage VCBO

120V

Maximum Emitter Base Voltage VEBO

5V

Transistor Polarity

NPN

Maximum Power Dissipation Pd

200W

Maximum Operating Temperature

200°C

Length

39.37mm

Standards/Approvals

No

Series

MJ1101

Width

26.67 mm

Height

8.51mm

Maximum Collector Cut-off Current

1mA

Automotive Standard

No

COO (Country of Origin):
CZ
The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.

The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain

• Monolithic Construction

• Built-in Base Emitter Shunt Resistor

• Junction Temperature: to +200°C

• NPN Polarity

Versions Available:

463-000 - pack of 2

100-7565 - tray of 100

NPN Darlington Transistors, ON Semiconductor


Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

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