ROHM High Side, High Side Power Switch IC 46-Pin, VQFN046V8080
- RS Stock No.:
- 646-596P
- Mfr. Part No.:
- BM3G005MUV-LBE2
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 10 units (supplied on a continuous strip)*
PHP9,591.95
(exc. VAT)
PHP10,742.98
(inc. VAT)
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In Stock
- 1,000 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 10 + | PHP959.195 |
*price indicative
- RS Stock No.:
- 646-596P
- Mfr. Part No.:
- BM3G005MUV-LBE2
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Power Switch IC | |
| Power Switch Topology | High Side | |
| Power Switch Type | High Side | |
| Switch On Resistance RdsOn | 50mΩ | |
| Minimum Supply Voltage | 6.83V | |
| Package Type | VQFN046V8080 | |
| Pin Count | 46 | |
| Maximum Supply Voltage | 650V | |
| Maximum Operating Temperature | 105°C | |
| Minimum Operating Temperature | -40°C | |
| Operating Current | 2.2mA | |
| Length | 8mm | |
| Height | 1.0mm | |
| Standards/Approvals | No | |
| Series | BM3G005MUV-LB | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Power Switch IC | ||
Power Switch Topology High Side | ||
Power Switch Type High Side | ||
Switch On Resistance RdsOn 50mΩ | ||
Minimum Supply Voltage 6.83V | ||
Package Type VQFN046V8080 | ||
Pin Count 46 | ||
Maximum Supply Voltage 650V | ||
Maximum Operating Temperature 105°C | ||
Minimum Operating Temperature -40°C | ||
Operating Current 2.2mA | ||
Length 8mm | ||
Height 1.0mm | ||
Standards/Approvals No | ||
Series BM3G005MUV-LB | ||
Automotive Standard No | ||
The ROHM GaN HEMT Power Stage is a high-performance product designed for the industrial equipment market, providing an optimal solution for electronics systems that require high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver into ROHM’s original package, the product significantly reduces parasitic inductance caused by PCB and wire bonding, compared to traditional discrete solutions. This innovation enables a high switching slew rate of up to 150V/ns, making it the ideal choice for applications demanding fast switching and superior efficiency.
Low VDD Quiescent and Operating Current
Low Propagation Delay
High dv/dt Immunity
Adjustable Gate Drive Strength
Power Good Signal Output
VDD UVLO Protection
Thermal Shutdown Protection
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