ROHM BM3G005MUV-LBE2 High Side, High Side Power Switch IC 46-Pin, VQFN046V8080

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Subtotal (1 tape of 2 units)*

PHP1,811.17

(exc. VAT)

PHP2,028.51

(inc. VAT)

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Units
Per Unit
Per Tape*
2 - 8PHP905.585PHP1,811.17
10 +PHP878.62PHP1,757.24

*price indicative

Packaging Options:
RS Stock No.:
646-596
Mfr. Part No.:
BM3G005MUV-LBE2
Manufacturer:
ROHM
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Brand

ROHM

Power Switch Type

High Side

Product Type

Power Switch IC

Power Switch Topology

High Side

Switch On Resistance RdsOn

50mΩ

Minimum Supply Voltage

6.83V

Package Type

VQFN046V8080

Maximum Supply Voltage

650V

Pin Count

46

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

105°C

Operating Current

2.2mA

Width

8.0 mm

Standards/Approvals

No

Length

8mm

Height

1.0mm

Automotive Standard

No

Series

BM3G005MUV-LB

The ROHM GaN HEMT Power Stage is a high-performance product designed for the industrial equipment market, providing an optimal solution for electronics systems that require high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver into ROHM’s original package, the product significantly reduces parasitic inductance caused by PCB and wire bonding, compared to traditional discrete solutions. This innovation enables a high switching slew rate of up to 150V/ns, making it the ideal choice for applications demanding fast switching and superior efficiency.

Low VDD Quiescent and Operating Current

Low Propagation Delay

High dv/dt Immunity

Adjustable Gate Drive Strength

Power Good Signal Output

VDD UVLO Protection

Thermal Shutdown Protection

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