STMicroelectronics Demonstration Board IGBT, MOSFET Driver for EVALSTDRV600HB8 for L638xE and L639x High Voltage Gate

The STMicroelectronics EVALSTDRV600HB8 demonstration board kit is developed for L638xE and L639x series high voltage compatible gate drivers and allows evaluating all of the gate driver features and functionalities while driving a half-bridge power stage based on N-channel MOSFETs or IGBTs in several different packages and with a voltage rating up to 600V. Vital components such as filtering and bootstrap capacitor are already mounted on the PCB. Passive components footprints are compatible with both SMT and T. H. Components, so they allow a fast and easy configuration and modification. This demonstration board kit is used for L638xE and L639x high voltage gates.

• Ability to drive asymmetrical half-bridges and switched reluctance motors
• Active high or active low LIN for single input gate driving
• Compact and simplified layout
• Compatible with MOSFETs/IGBTs in DPAK, D2PAK, TO-220, TO-220FP
• Dedicated high and low-side driving inputs
• Gate drivers in the kit features different functionalities and characteristics
• Half-bridge configuration
• High voltage rail up to 600V
• Integrated bootstrap diode
• Interlocking for anti-cross conduction protection
• Internal deadtime or no deadtime

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