STMicroelectronics Type N-Channel MOSFET, 5.8 A, 900 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 920-6639
- Mfr. Part No.:
- STB6NK90ZT4
- Manufacturer:
- STMicroelectronics
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Subtotal (1 reel of 1000 units)*
PHP90,288.00
(exc. VAT)
PHP101,123.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,000 unit(s) ready to ship from another location
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Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | PHP90.288 | PHP90,288.00 |
| 2000 - 3000 | PHP87.579 | PHP87,579.00 |
| 4000 - 9000 | PHP84.952 | PHP84,952.00 |
| 10000 - 19000 | PHP82.403 | PHP82,403.00 |
| 20000 + | PHP79.931 | PHP79,931.00 |
*price indicative
- RS Stock No.:
- 920-6639
- Mfr. Part No.:
- STB6NK90ZT4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 140W | |
| Typical Gate Charge Qg @ Vgs | 46.5nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.35 mm | |
| Length | 10.4mm | |
| Height | 4.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 140W | ||
Typical Gate Charge Qg @ Vgs 46.5nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 9.35 mm | ||
Length 10.4mm | ||
Height 4.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
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Related links
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-263 STB6NK90ZT4
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- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220 STP6NK90ZFP
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- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247
