N-Channel MOSFET, 5.8 A, 900 V, 3-Pin D2PAK STMicroelectronics STB6NK90ZT4
- RS Stock No.:
- 687-5140
- Mfr. Part No.:
- STB6NK90ZT4
- Manufacturer:
- STMicroelectronics
Subtotal (1 pack of 2 units)**
PHP355.61
(exc. VAT)
PHP398.28
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
---|---|---|
2 - 8 | PHP177.805 | PHP355.61 |
10 - 18 | PHP172.475 | PHP344.95 |
20 - 48 | PHP167.29 | PHP334.58 |
50 - 98 | PHP162.275 | PHP324.55 |
100 + | PHP157.405 | PHP314.81 |
**price indicative
- RS Stock No.:
- 687-5140
- Mfr. Part No.:
- STB6NK90ZT4
- Manufacturer:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 5.8 A | |
Maximum Drain Source Voltage | 900 V | |
Package Type | D2PAK (TO-263) | |
Series | MDmesh, SuperMESH | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 140 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 46.5 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Length | 10.4mm | |
Width | 9.35mm | |
Height | 4.6mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.8 A | ||
Maximum Drain Source Voltage 900 V | ||
Package Type D2PAK (TO-263) | ||
Series MDmesh, SuperMESH | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 46.5 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.4mm | ||
Width 9.35mm | ||
Height 4.6mm | ||
Minimum Operating Temperature -55 °C | ||
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