Vishay N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC IRFP250PBF
- RS Stock No.:
- 919-0032
- Mfr. Part No.:
- IRFP250PBF
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 tube of 25 units)**
PHP3,508.40
(exc. VAT)
PHP3,929.40
(inc. VAT)
325 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP3,000.00 (ex VAT)
Real time qty checker
Units | Per Unit | Per Tube** |
|---|---|---|
| 25 - 25 | PHP140.336 | PHP3,508.40 |
| 50 - 50 | PHP136.827 | PHP3,420.675 |
| 75 + | PHP133.406 | PHP3,335.15 |
**price indicative
- RS Stock No.:
- 919-0032
- Mfr. Part No.:
- IRFP250PBF
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 85 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 190 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 140 nC @ 10 V | |
| Length | 15.87mm | |
| Number of Elements per Chip | 1 | |
| Width | 5.31mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 20.7mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 85 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 140 nC @ 10 V | ||
Length 15.87mm | ||
Number of Elements per Chip 1 | ||
Width 5.31mm | ||
Maximum Operating Temperature +150 °C | ||
Height 20.7mm | ||
Minimum Operating Temperature -55 °C | ||
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