IXYS X2-Class N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 917-1485P
- Mfr. Part No.:
- IXTP4N65X2
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 50 units (supplied in a tube)*
PHP12,913.70
(exc. VAT)
PHP14,463.35
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- 20 unit(s) ready to ship from another location
- Plus 50 unit(s) shipping from April 07, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 50 - 95 | PHP258.274 |
| 100 - 245 | PHP250.528 |
| 250 - 495 | PHP243.01 |
| 500 + | PHP235.72 |
*price indicative
- RS Stock No.:
- 917-1485P
- Mfr. Part No.:
- IXTP4N65X2
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | X2-Class | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Maximum Power Dissipation Pd | 80W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.7mm | |
| Standards/Approvals | No | |
| Width | 15.9mm | |
| Length | 10.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series X2-Class | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Maximum Power Dissipation Pd 80W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.7mm | ||
Standards/Approvals No | ||
Width 15.9mm | ||
Length 10.3mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- Unistrut 41 x 41mm Slotted Galvanised Steel Strut, 2m Long
- RS PRO Stainless Steel Perforated Metal Sheet 500mm x 500mm, 0.55mm Thick
- Belden Cat6 Ethernet Cable Grey PVC Sheath, 100m
- Stanley Tylon 8m Tape Measure, Metric & Imperial
- Arduino Uno Rev 3 SMD
- RS PRO Combination Pliers Straight Tip, 34mm Jaw
- RS PRO 150 mm Stainless Steel Scissors
- RS PRO Phillips Screwdriver 150 mm Blade, 270 mm Overall