Name: Infineon HEXFET Type N-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC IRF8707TRPBF
Brand: Infineon
SKU: 915-4976
Price: 31.50 PHP
Availability: Discontinued

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	17.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	6.2nC
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Height	1.5mm
	Width	4 mm
	Length	5mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 17.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 6.2nC
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Height 1.5mm
	Width 4 mm
	Length 5mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF8707TRPBF

This MOSFET is tailored for power applications, enhancing efficiency and thermal performance. Its low on-resistance and minimal gate charge significantly reduce both conduction and switching losses, making it well-suited for high-efficiency DC-DC converters across various applications. The Compact SOIC package increases versatility and integrates easily into confined spaces.

Features & Benefits

• Low gate charge diminishes switching losses in applications

• Maximum continuous drain current of 11A boosts performance

• High temperature tolerance up to +150°C ensures reliability

• Low Rds(on) enhances overall power efficiency

• N-channel configuration allows flexible designs

• Fully characterised for avalanche voltage and current provides added security

Applications

• Control of MOSFETs in synchronous buck converters

• Use in isolated DC-DC converters for networking systems

• Power management solutions for notebook processors

• Implementation in automation and control systems for improved performance

What is the suitability for high-temperature environments?

The device operates effectively at temperatures up to +150°C, ensuring reliability in high-heat conditions typical of power applications.

How does this product manage power dissipation?

With a maximum power dissipation of 2.5W, it balances thermal performance, decreasing the risk of overheating.

Can it handle different voltage ratings?

Yes, it can withstand a maximum drain-source voltage of 30V, making it versatile for various applications.

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 2.35V, ensuring compatibility with a range of drive circuits.

How does the low Rds(on) impact its performance?

The low drain-source on-resistance minimises conduction losses, enhancing efficiency and reducing heat generation during operation.

Infineon HEXFET Type N-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC IRF8707TRPBF