N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

RS Stock No.:: 903-4504
Mfr. Part No.:: SiHB28N60EF-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 2)

PHP300.89

(exc. VAT)

PHP337.00

(inc. VAT)

642 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Pack**
2 - 8	PHP300.89	PHP601.78
10 - 38	PHP277.22	PHP554.44
40 - 98	PHP273.615	PHP547.23
100 - 198	PHP270.105	PHP540.21
200 +	PHP266.69	PHP533.38

**price indicative

RS Stock No.:: 903-4504
Mfr. Part No.:: SiHB28N60EF-GE3
Manufacturer:: Vishay

SiHB28N60EF, EF Series Power MOSFET with Fast Body Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	600 V
Series	EF Series
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	123 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	9.65mm
Typical Gate Charge @ Vgs	80 nC @ 10 V
Length	10.67mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Height	4.83mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

FREE delivery for over PHP7,000.00 (ex VAT)

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

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