onsemi 2N7000 N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92
- RS Stock No.:
- 903-4074P
- Mfr. Part No.:
- 2N7000-D26Z
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 200 units (supplied as a tape)*
PHP2,555.80
(exc. VAT)
PHP2,862.40
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- 1,200 unit(s) shipping from September 30, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 200 - 400 | PHP12.779 |
| 500 - 900 | PHP12.396 |
| 1000 - 1900 | PHP12.121 |
| 2000 + | PHP11.857 |
*price indicative
- RS Stock No.:
- 903-4074P
- Mfr. Part No.:
- 2N7000-D26Z
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | 2N7000 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.88V | |
| Maximum Power Dissipation Pd | 400mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.33mm | |
| Width | 4.19mm | |
| Standards/Approvals | No | |
| Length | 5.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series 2N7000 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.88V | ||
Maximum Power Dissipation Pd 400mW | ||
Maximum Operating Temperature 150°C | ||
Height 5.33mm | ||
Width 4.19mm | ||
Standards/Approvals No | ||
Length 5.2mm | ||
Automotive Standard No | ||
Advanced Power MOSFET, Fairchild Semiconductor
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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