Infineon OptiMOS 3 N-Channel MOSFET, 83 A, 150 V Enhancement, 3-Pin TO-220 IPP111N15N3GXKSA1
- RS Stock No.:
- 897-7412
- Mfr. Part No.:
- IPP111N15N3GXKSA1
- Manufacturer:
- Infineon
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PHP1,061.54
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PHP1,188.924
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Units | Per Unit | Per Pack* |
|---|---|---|
| 4 - 16 | PHP265.385 | PHP1,061.54 |
| 20 - 76 | PHP251.65 | PHP1,006.60 |
| 80 - 196 | PHP249.043 | PHP996.17 |
| 200 - 396 | PHP246.605 | PHP986.42 |
| 400 + | PHP244.348 | PHP977.39 |
*price indicative
- RS Stock No.:
- 897-7412
- Mfr. Part No.:
- IPP111N15N3GXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 83A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.57mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Height | 15.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 83A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Operating Temperature 175°C | ||
Width 4.57mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Height 15.95mm | ||
Automotive Standard No | ||
Infineon OptiMOS™ 3 Series MOSFET, 83A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IPP111N15N3GXKSA1
This MOSFET is suitable for high-efficiency switching applications, significantly enhancing system efficiency and performance across various industries including automation and electronics. Its features, including a high continuous drain current and broad operating temperature range, make it adaptable for various environments.
Features & Benefits
• N-channel design for effective switching capabilities
• Low on-resistance which reduces power loss
• High power dissipation capacity for consistent operation
• Effectively handles both pulsed and continuous currents
• Through-hole mounting design for easy installation
Applications
• Ideal for synchronous rectification in power supplies
• Applicable in high-frequency switching for enhanced efficiency
• Suitable for automotive and industrial automation systems
• Utilised in energy conversion systems like converters and inverters
• Employed in power management for renewable energy technologies
Can this be used in industrial automation systems?
Yes, it is suitable for automated systems due to its efficiency and dependable performance.
What are the benefits of using this component in power supplies?
It features low on-resistance and high drain current, minimising power losses and improving thermal management in power supply designs.
How does this perform under extreme temperatures?
This component operates reliably within a temperature range of -55°C to +175°C, making it suitable for harsh conditions.
Is it compatible with existing designs in my application?
Yes, its TO-220 package type and through-hole mounting style are compatible with many established circuit designs.
What should I consider for proper installation?
Ensure proper thermal management and adequate space for heat dissipation to maintain optimal performance during operation.
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