Toshiba TK Type N-Channel MOSFET, 10 A, 800 V Enhancement, 3-Pin TO-220 TK10A80E,S4X(S
- RS Stock No.:
- 896-2647
- Mfr. Part No.:
- TK10A80E,S4X(S
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP384.06
(exc. VAT)
PHP430.145
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 10 unit(s) ready to ship from another location
- Plus 340 unit(s) shipping from January 09, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP76.812 | PHP384.06 |
| 25 - 120 | PHP74.508 | PHP372.54 |
| 125 - 245 | PHP72.272 | PHP361.36 |
| 250 - 495 | PHP70.67 | PHP353.35 |
| 500 + | PHP69.134 | PHP345.67 |
*price indicative
- RS Stock No.:
- 896-2647
- Mfr. Part No.:
- TK10A80E,S4X(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | TK | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.5 mm | |
| Length | 10mm | |
| Height | 15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series TK | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Width 4.5 mm | ||
Length 10mm | ||
Height 15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET Transistors, Toshiba
Related links
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