Infineon OptiMOS 3 N-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 892-2330
- Distrelec Article No.:
- 304-44-436
- Mfr. Part No.:
- IPP039N04LGXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP993.03
(exc. VAT)
PHP1,112.19
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP99.303 | PHP993.03 |
| 20 - 40 | PHP96.323 | PHP963.23 |
| 50 - 90 | PHP93.433 | PHP934.33 |
| 100 - 190 | PHP90.631 | PHP906.31 |
| 200 + | PHP87.914 | PHP879.14 |
*price indicative
- RS Stock No.:
- 892-2330
- Distrelec Article No.:
- 304-44-436
- Mfr. Part No.:
- IPP039N04LGXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 94W | |
| Forward Voltage Vf | 920mV | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Height | 15.95mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Width | 4.572mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 94W | ||
Forward Voltage Vf 920mV | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Height 15.95mm | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Width 4.572mm | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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