Toshiba TK Type N-Channel MOSFET, 13.7 A, 650 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 891-2891
- Mfr. Part No.:
- TK14N65W,S1F(S
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP952.38
(exc. VAT)
PHP1,066.665
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 30 unit(s) shipping from January 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP190.476 | PHP952.38 |
| 25 - 120 | PHP179.434 | PHP897.17 |
| 125 - 245 | PHP169.79 | PHP848.95 |
| 250 - 495 | PHP161.282 | PHP806.41 |
| 500 + | PHP153.652 | PHP768.26 |
*price indicative
- RS Stock No.:
- 891-2891
- Mfr. Part No.:
- TK14N65W,S1F(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13.7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | TK | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 130W | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | -1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.02 mm | |
| Length | 15.94mm | |
| Height | 20.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13.7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series TK | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 130W | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf -1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.02 mm | ||
Length 15.94mm | ||
Height 20.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET Transistors, Toshiba
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