Toshiba TK Type N-Channel MOSFET, 207 A, 100 V Enhancement, 3-Pin TO-220 TK100A10N1,S4X(S
- RS Stock No.:
- 891-2866
- Mfr. Part No.:
- TK100A10N1,S4X(S
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP378.86
(exc. VAT)
PHP424.32
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 2 unit(s) shipping from December 29, 2025
- Plus 2 unit(s) shipping from January 05, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP189.43 | PHP378.86 |
| 10 - 48 | PHP183.75 | PHP367.50 |
| 50 - 98 | PHP178.24 | PHP356.48 |
| 100 - 198 | PHP174.28 | PHP348.56 |
| 200 + | PHP170.495 | PHP340.99 |
*price indicative
- RS Stock No.:
- 891-2866
- Mfr. Part No.:
- TK100A10N1,S4X(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 207A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 45W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.5 mm | |
| Length | 10mm | |
| Height | 15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 207A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 45W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.5 mm | ||
Length 10mm | ||
Height 15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET Transistors, Toshiba
Related links
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