Toshiba Single 2SK 1 Type N-Channel MOSFET, 5 A, 900 V Enhancement, 3-Pin SC-67 2SK3565,S5Q(J
- RS Stock No.:
- 890-2695
- Mfr. Part No.:
- 2SK3565,S5Q(J
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP663.16
(exc. VAT)
PHP742.74
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 60 unit(s) ready to ship from another location
- Plus 185 unit(s) shipping from April 16, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP132.632 | PHP663.16 |
| 25 - 120 | PHP128.65 | PHP643.25 |
| 125 - 245 | PHP124.788 | PHP623.94 |
| 250 - 495 | PHP121.042 | PHP605.21 |
| 500 + | PHP117.408 | PHP587.04 |
*price indicative
- RS Stock No.:
- 890-2695
- Mfr. Part No.:
- 2SK3565,S5Q(J
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | 2SK | |
| Package Type | SC-67 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 45W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | No | |
| Length | 10mm | |
| Height | 15mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series 2SK | ||
Package Type SC-67 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 45W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals No | ||
Length 10mm | ||
Height 15mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba Single 2SK 1 Type N-Channel MOSFET 900 V EnhancementS5Q(J
- Toshiba Single 2SK 1 Type N-Channel MOSFET 900 V EnhancementS5Q(J
- Toshiba Type N-Channel MOSFET 200 V EnhancementS4X(S
- Toshiba Type N-Channel MOSFET 250 V EnhancementS4X(S
- Toshiba 2SK Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-59 2SK1062(F)
- Toshiba Single 1 Type N-Channel MOSFET Enhancement, 3-Pin SOT-23 SSM3K361R
- Toshiba Single 1 Type N-Channel MOSFET 3-Pin SOT-723 SSM3K37MFV
- Toshiba Single 1 Type N-Channel MOSFET EnhancementLF(B