STMicroelectronics Type N-Channel MOSFET, 17.5 A, 950 V Enhancement, 3-Pin TO-247 STW20N95K5
- RS Stock No.:
- 877-3021
- Mfr. Part No.:
- STW20N95K5
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP1,828.58
(exc. VAT)
PHP2,048.01
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from June 08, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP365.716 | PHP1,828.58 |
| 25 - 95 | PHP354.744 | PHP1,773.72 |
| 100 - 245 | PHP340.556 | PHP1,702.78 |
| 250 - 495 | PHP323.528 | PHP1,617.64 |
| 500 + | PHP304.118 | PHP1,520.59 |
*price indicative
- RS Stock No.:
- 877-3021
- Mfr. Part No.:
- STW20N95K5
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17.5A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 330mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 250W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.15 mm | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Height | 20.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17.5A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 330mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 250W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 5.15 mm | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Height 20.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-220 STP20N95K5
- Infineon IPW Type N-Channel MOSFET 950 V, 3-Pin TO-247
- Infineon IPW Type N-Channel MOSFET 950 V, 3-Pin TO-247 IPW95R310PFD7XKSA1
- STMicroelectronics Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-220