IXYS GigaMOS, HiperFET N-Channel MOSFET, 550 A, 55 V Enhancement, 24-Pin SMPD

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Subtotal 10 units (supplied in a tube)*

PHP34,457.80

(exc. VAT)

PHP38,592.70

(inc. VAT)

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Temporarily out of stock
  • Shipping from March 30, 2027
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Units
Per Unit
10 - 49PHP3,445.78
50 - 99PHP3,021.84
100 - 249PHP2,961.89
250 +PHP2,903.52

*price indicative

Packaging Options:
RS Stock No.:
875-2500P
Mfr. Part No.:
MMIX1T550N055T2
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

550A

Maximum Drain Source Voltage Vds

55V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

1.3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

595nC

Maximum Power Dissipation Pd

830W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

23.25mm

Height

5.7mm

Length

25.25mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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