onsemi PowerTrench Type N-Channel MOSFET, 2.3 A, 150 V Enhancement, 6-Pin SOT-23 FDC86244
- RS Stock No.:
- 864-8026
- Mfr. Part No.:
- FDC86244
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP432.57
(exc. VAT)
PHP484.48
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,220 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP43.257 | PHP432.57 |
| 20 - 40 | PHP41.959 | PHP419.59 |
| 50 - 90 | PHP40.699 | PHP406.99 |
| 100 - 190 | PHP39.478 | PHP394.78 |
| 200 + | PHP38.293 | PHP382.93 |
*price indicative
- RS Stock No.:
- 864-8026
- Mfr. Part No.:
- FDC86244
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 273mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 4.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 3mm | |
| Width | 1.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 273mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 4.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 3mm | ||
Width 1.7 mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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