N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220SIS Toshiba TK7A60W,S4VX(M

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Subtotal 25 units (supplied in a tube)*

PHP1,345.85

(exc. VAT)

PHP1,507.35

(inc. VAT)

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Units
Per Unit
25 - 45PHP53.834
50 - 245PHP52.698
250 - 495PHP51.564
500 +PHP50.428

*price indicative

Packaging Options:
RS Stock No.:
827-6270P
Mfr. Part No.:
TK7A60W,S4VX(M
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Width

4.5mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Length

10mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

15mm

Series

TK

COO (Country of Origin):
MY

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