Infineon OptiMOS Type N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1

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PHP1,881.60

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PHP2,107.40

(inc. VAT)

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Per Pack*
25 - 25PHP75.264PHP1,881.60
50 - 225PHP72.57PHP1,814.25
250 - 475PHP69.92PHP1,748.00
500 - 975PHP67.183PHP1,679.58
1000 +PHP66.278PHP1,656.95

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Packaging Options:
RS Stock No.:
827-5120
Mfr. Part No.:
IPD30N08S2L21ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

26mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

136W

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

56nC

Maximum Operating Temperature

175°C

Width

6.22 mm

Length

6.73mm

Standards/Approvals

No

Height

2.41mm

Automotive Standard

AEC-Q101

RoHS Status: Not Applicable

Infineon OptiMOS™ Power MOSFET Family


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C Peak reflow

175°C operating temperature

Green package (lead free)

Ultra low Rds(on)

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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