Texas Instruments NexFET N-Channel MOSFET, 100 A, 60 V, 8-Pin VSONP CSD18563Q5A
- RS Stock No.:
- 827-4909
- Mfr. Part No.:
- CSD18563Q5A
- Manufacturer:
- Texas Instruments
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Subtotal (1 pack of 5 units)*
PHP435.95
(exc. VAT)
PHP488.25
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP87.19 | PHP435.95 |
| 25 - 95 | PHP78.988 | PHP394.94 |
| 100 - 245 | PHP75.208 | PHP376.04 |
| 250 - 495 | PHP72.088 | PHP360.44 |
| 500 + | PHP67.198 | PHP335.99 |
*price indicative
- RS Stock No.:
- 827-4909
- Mfr. Part No.:
- CSD18563Q5A
- Manufacturer:
- Texas Instruments
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | NexFET | |
| Package Type | VSONP | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 10.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 1.7V | |
| Maximum Power Dissipation | 3.2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 5.8mm | |
| Number of Elements per Chip | 1 | |
| Width | 5mm | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 60 V | ||
Series NexFET | ||
Package Type VSONP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 10.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1.7V | ||
Maximum Power Dissipation 3.2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 15 nC @ 10 V | ||
Transistor Material Si | ||
Length 5.8mm | ||
Number of Elements per Chip 1 | ||
Width 5mm | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel NexFET™ Power MOSFET, Texas Instruments
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MOSFET Transistors, Texas Instruments